 |
| Place of Origin: | CN |
| Brand Name: | IOR |
| Certification: | CE |
| Model Number: | IRF640NSTRLPBF |
| Minimum Order Quantity: | 100 pieces |
|---|---|
| Price: | negotiable |
| Packaging Details: | Tape and Reel |
| Delivery Time: | 1-2 working days |
| Payment Terms: | T/T, Western Union, Paypal |
| Supply Ability: | 100Kpcs per year |
| Goods Condition: | Brand New | Part Status: | Active |
|---|---|---|---|
| Lead Free / Rohs: | Complaint | Function: | Mosfet |
| Mounting Type: | Surface Mount | Package: | D2PAK |
| Highlight: | high power mosfet transistors,n channel mosfet transistor |
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IRF640NSTRLPBF N-Channel Mosfet Transistor 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK
Advanced Process Technology
Dynamic dv/dt Rating 175°C Operating Temperature
Fast Switching Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.
| Manufacturer | Infineon Technologies | |
|---|---|---|
| Series | HEXFET® | |
Packaging  |
Tape & Reel (TR) |
|
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 150W (Tc) | |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Contact Person: Mr. Zhu
Tel: 86-13040862868
Fax: 86-755-23816038
