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| Place of Origin: | CN |
| Brand Name: | Mitsubishi |
| Certification: | CE |
| Model Number: | RD06HVF1 |
| Minimum Order Quantity: | 50 pieces |
|---|---|
| Price: | negotiable |
| Packaging Details: | plastic tube |
| Delivery Time: | 1-2 working days |
| Payment Terms: | T/T, Western Union, Paypal |
| Supply Ability: | 10Kpcs per year |
| Goods Condition: | Brand New | Part Status: | Active |
|---|---|---|---|
| Lead Free / Rohs: | Complaint | Function: | Amp |
| Mounting Type: | Throught Hole | Package: | TO220 |
| Highlight: | high power mosfet transistors,n channel mosfet transistor,RF Power Transistor 175MHz 6W |
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RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications
Description of RD06HVF1
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications
FEATURES of RD06HVF1
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION of RD06HVF1
For output stage of high power amplifiers in VHF band mobile radio sets.
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Contact Person: Mr. Zhu
Tel: 86-13040862868
Fax: 86-755-23816038
