Place of Origin: | JP |
Brand Name: | Mitsubishi |
Certification: | IEC |
Model Number: | RA03M8087M-101 |
Minimum Order Quantity: | 1 piece |
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Price: | negotiable |
Packaging Details: | factory standard packing |
Delivery Time: | 1-2 working days |
Payment Terms: | T/T, Western Union, Paypal |
Supply Ability: | 10000 pieces per year |
Condition: | 100% Brand New Product | Part Status: | Active |
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Package: | H46S | Lead Free Status / RoHS Status: | Compliant |
Output Power: | 3.6W | Voltage: | 7.2V |
Highlight: | n channel mosfet transistor,n channel transistor |
RA03M8087M-101 806-870MHz 3.6W 7.2V, 2 Stage Amp. RF Power Transistor For PORTABLE RADIO
Description
The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power
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Contact Person: Mr. Zhu
Tel: 86-13040862868
Fax: 86-755-23816038