 |
| Place of Origin: | USA |
| Brand Name: | MA-COM |
| Certification: | IEC |
| Model Number: | MRF151G |
| Minimum Order Quantity: | 1 piece |
|---|---|
| Price: | negotiable |
| Packaging Details: | factory standard packing |
| Delivery Time: | 1-2 working days |
| Payment Terms: | T/T, Western Union, Paypal |
| Supply Ability: | 10000 pieces per year |
| Drain Source Voltage: | 125Vdc | Drain Gate Voltage: | 125Vdc |
|---|---|---|---|
| Gate Source Voltage: | ±40Vdc | Drain Current: | 40Adc |
| Power Dissipation: | 500W | Feature: | High Efficiency |
| Highlight: | n channel mosfet transistor,n channel transistor |
||
MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278
Features
1, Guaranteed Performance at 175 MHz, 50 V
2, Output Power — 300 W • Gain — 14 dB (16 dB Typ)
3, Efficiency — 50% • Low Thermal Resistance — 0.35°C/W
4, Ruggedness Tested at Rated Output Power
5, Nitride Passivated Die for Enhanced Reliability
Description and Applications
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
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Contact Person: Mr. Zhu
Tel: 86-13040862868
Fax: 86-755-23816038
